Manufacturer Part Number
STF7N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Designed for high-voltage, high-power switching applications
Low on-resistance (Rds(on)) for high efficiency
Fast switching speed for improved system performance
Wide operating temperature range (-55°C to 150°C)
High drain-to-source voltage (650V)
Low input capacitance (270pF) for efficient switching
High continuous drain current (5A at 25°C)
Low gate charge (9nC) for efficient driving
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Fast switching for improved system performance
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.15Ω @ 2.5A, 10V
Continuous Drain Current (Id): 5A (at 25°C)
Input Capacitance (Ciss): 270pF @ 100V
Power Dissipation (Ptot): 20W (at 25°C)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-voltage, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power efficiency and high-voltage performance
Fast switching speed for improved system performance
Wide operating temperature range for versatile applications
Reliable and high-quality design
Compatibility with a wide range of high-power switching applications