Manufacturer Part Number
STF5N95K3
Manufacturer
STMicroelectronics
Introduction
High-voltage N-Channel MOSFET with SuperMESH3 technology for high-performance switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 950V
Low On-Resistance (Rds(on)) of 3.5Ω @ 2A, 10V
Continuous Drain Current (Id) of 4A @ 25°C
Wide Operating Temperature Range of -55°C to 150°C
Low Input Capacitance (Ciss) of 460pF @ 25V
Maximum Power Dissipation of 25W @ Tc
Product Advantages
Excellent performance for high-voltage switching applications
Low conduction losses due to low on-resistance
Reliable operation across wide temperature range
Compact TO-220FP package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 950V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.5Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 460pF @ 25V
Power Dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Proven STMicroelectronics manufacturing quality
Compatibility
Compatible with standard TO-220FP package footprint
Application Areas
High-voltage switching applications
Power supplies
Motor drives
Industrial electronics
Product Lifecycle
Current production, no discontinuation planned
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High voltage capability up to 950V
Low on-resistance for efficient power switching
Wide operating temperature range for reliable performance
Compact TO-220FP package for space-constrained designs
Proven STMicroelectronics quality and reliability
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