STD5NK40Z-1 - STMicroelectronics

Manufacturer Part Number

STD5NK40Z-1

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 400 V

Vgs (Max): ±30 V

Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5 A, 10 V

Current Continuous Drain (Id) @ 25°C: 3 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 25 V

Power Dissipation (Max): 45 W (Tc)

Vgs(th) (Max) @ Id: 4.5 V @ 50 A

Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V

Product Advantages

High voltage, high power capabilities

Low on-resistance for efficient performance

Suitable for a variety of power switching applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Drive Voltage (Max Rds On, Min Rds On): 10 V

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Mounting Type: Through Hole

Manufacturer's packaging: TO-251 (IPAK)

Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package: TO-251 (IPAK)

Application Areas

Suitable for a variety of power switching applications

Product Lifecycle

Currently available

No information on discontinuation or replacements

Several Key Reasons to Choose This Product

High voltage and power handling capabilities

Low on-resistance for efficient performance

Suitable for a wide range of power switching applications

RoHS3 compliant for environmental considerations

Compatible with common TO-251 (IPAK) packaging