Manufacturer Part Number
STD40P8F6AG
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
80V Drain-Source Voltage
±20V Gate-Source Voltage
28mΩ On-Resistance
40A Continuous Drain Current
4112pF Input Capacitance
73nC Gate Charge
100W Power Dissipation
AEC-Q101 Automotive Qualified
-55°C to 175°C Operating Temperature
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Suitable for automotive and industrial applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 28mΩ
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 4112pF
Gate Charge (Qg): 73nC
Power Dissipation (Tc): 100W
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Automotive Qualified
Compatibility
Surface Mount Package: D-PAK (TO-252)
Tape and Reel Packaging
Application Areas
Automotive electronics
Industrial power conversion
Switching power supplies
Motor drives
Lighting control
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for improved performance
Automotive and industrial-grade quality
Wide operating temperature range
Compact surface mount package