STD35NF06LT4 - STMicroelectronics

Manufacturer Part Number

STD35NF06LT4

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities.

Product Features and Performance

60V drain-to-source voltage rating

35A continuous drain current at 25°C

17mΩ maximum on-resistance at 10V gate-to-source voltage

1700pF maximum input capacitance at 25V drain-to-source voltage

80W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 175°C

Fast switching capabilities with 33nC maximum gate charge at 4.5V

Product Advantages

Excellent power efficiency due to low on-resistance

Compact DPAK surface-mount package

Suitable for high-current, high-frequency switching applications

Reliable performance across wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Maximum Gate-to-Source Voltage (Vgs): ±16V

On-Resistance (Rds(on)): 17mΩ @ 17.5A, 10V

Continuous Drain Current (Id): 35A @ 25°C

Input Capacitance (Ciss): 1700pF @ 25V

Power Dissipation (Ptot): 80W @ Tc

Quality and Safety Features

ROHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Can be used as a replacement or upgrade for similar N-channel MOSFET transistors in various power electronics applications.

Application Areas

Switching power supplies

Motor drives

Industrial and automotive electronics

Telecommunication equipment

Consumer electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available from STMicroelectronics and other MOSFET manufacturers.

Key Reasons to Choose This Product

Excellent power efficiency and performance due to low on-resistance

Compact and reliable DPAK package suitable for high-current applications

Wide operating temperature range for use in demanding environments

Automotive-grade quality and reliability

Readily available and compatible with a variety of power electronics designs.