Manufacturer Part Number
STD25NF10T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor for power management and switching applications
Product Features and Performance
Drain-source voltage up to 100V
Very low on-resistance (RDS(on) = 38 mΩ at 12.5 A, 10 V)
High continuous drain current (ID = 25 A at 25°C)
Wide operating temperature range (-55°C to 175°C)
Fast switching capabilities
Optimized for high-efficiency power conversion
Suitable for hard switching and soft switching applications
Product Advantages
Excellent power handling and efficiency
Reliable and robust performance
Wide temperature range for diverse applications
Optimized for high-frequency switching
Key Technical Parameters
Drain-source voltage (VDS): 100 V
Gate-source voltage (VGS): ±20 V
On-resistance (RDS(on)): 38 mΩ @ 12.5 A, 10 V
Continuous drain current (ID): 25 A @ 25°C
Input capacitance (Ciss): 1550 pF @ 25 V
Power dissipation (Ptot): 100 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Robust and reliable design
Compatibility
Suitable for a wide range of power management and switching applications
Can be used in various power electronics systems, such as motor drives, power supplies, and inverters
Application Areas
Power management and conversion
Motor control
Switched-mode power supplies
Inverters and converters
Industrial automation and control
Product Lifecycle
This product is actively supported and not nearing discontinuation
Replacement or upgrade options are available for future design needs
Key Reasons to Choose This Product
Excellent power handling capability and efficiency
Reliable and robust performance in a wide temperature range
Optimized for high-frequency switching applications
Compact and easy-to-use surface mount package
Proven track record in diverse power electronics applications