Manufacturer Part Number
STD20NF06T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching for power management applications.
Product Features and Performance
Low on-resistance of 40 mΩ @ 12 A, 10 V
High continuous drain current of 24 A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching with low gate charge of 31 nC @ 10 V
High drain-source voltage of 60 V
Compact DPAK surface mount package
Product Advantages
Excellent power efficiency and thermal performance
Improved power density and system reliability
Suitable for high-current and high-voltage applications
Easy to integrate into power management circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 60 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 40 mΩ @ 12 A, 10 V
Continuous Drain Current (Id): 24 A @ 25°C
Input Capacitance (Ciss): 690 pF @ 25 V
Power Dissipation (Pd): 60 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power management applications
Application Areas
Switching power supplies
Motor drives
Telecommunications equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Fast switching and high current handling capability
Wide operating temperature range for reliable operation
Compact surface mount package for space-constrained designs
Proven quality and reliability from a reputable manufacturer
STD20NF20T4STMicroelectronics
STD20P07LT4G-VF01ONsemi