Manufacturer Part Number
STD1HN60K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
600V drain-source voltage
8Ω max on-resistance at 600mA and 10V gate-source voltage
2A max continuous drain current at 25°C
Low input capacitance of 140pF at 50V
27W max power dissipation
Product Advantages
Robust and reliable design
High efficiency for power conversion applications
Compact DPAK package for space-saving designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 8Ω (max) @ 600mA, 10V
Drain Current (Id): 1.2A (max) at 25°C
Input Capacitance (Ciss): 140pF (max) @ 50V
Power Dissipation (Ptot): 27W (max) at Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency for power conversion applications
Robust and reliable design for long-term operation
Compact DPAK package for space-saving designs
RoHS3 compliance for environmentally-friendly use
Backed by STMicroelectronics' quality and support
STD1955NLVBSEMI