Manufacturer Part Number
STD1802T4-A
Manufacturer
STMicroelectronics
Introduction
The STD1802T4-A is a high-performance NPN bipolar junction transistor (BJT) designed for various power switching and amplification applications.
Product Features and Performance
High power capability up to 15W
Wide collector-emitter breakdown voltage of 60V
High DC current gain of 200 (min) at 100mA, 2V
High transition frequency of 150MHz
Low collector-emitter saturation voltage of 400mV at 150mA, 3A
Product Advantages
Robust and reliable performance
Compact DPAK surface mount package
Excellent thermal management
Suitable for high-current, high-frequency applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60V (max)
Collector Current (IC): 3A (max)
Collector Cutoff Current (ICBO): 100nA (max)
Collector-Emitter Saturation Voltage (VCE(sat)): 400mV (max) at 150mA, 3A
DC Current Gain (hFE): 200 (min) at 100mA, 2V
Transition Frequency (fT): 150MHz
Quality and Safety Features
RoHS3 compliant
Reliable DPAK package construction
Compatibility
The STD1802T4-A is compatible with a wide range of electronic circuits and systems that require high-performance NPN bipolar junction transistors.
Application Areas
Power amplifiers
Switching regulators
Motor drives
Lighting controls
Industrial and automotive electronics
Product Lifecycle
The STD1802T4-A is an active product and is not nearing discontinuation. Replacement or upgraded models may become available in the future as technology evolves.
Key Reasons to Choose This Product
High power handling capability up to 15W
Wide operating voltage range up to 60V
Excellent high-frequency performance with a transition frequency of 150MHz
Robust and reliable DPAK package design
RoHS3 compliance for environmental sustainability
Suitable for a wide range of power switching and amplification applications