Manufacturer Part Number
STD15N60M2-EP
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor with enhanced performance and reliability for various power electronics applications.
Product Features and Performance
600V breakdown voltage for high-voltage operation
Ultra-low on-resistance for high efficiency
Fast switching speed for high-frequency applications
Compact DPAK package for space-saving design
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Superior thermal management
Reliable and robust performance
Optimized for high-frequency switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 378mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 590pF @ 100V
Power Dissipation (Pd): 110W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in various power electronics applications, including power supplies, motor drives, and switching circuits.
Application Areas
Power supplies
Motor drives
Inverters
Switching circuits
Power electronics applications
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Reliable and robust performance across a wide temperature range
Compact DPAK package for space-saving design
Optimized for high-frequency switching applications
Compliant with RoHS3 standards for environmental responsibility
STD15ASTD
STD160-1STMicroelectronics