Manufacturer Part Number
STD12N50M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh M2 technology
Product Features and Performance
High-voltage operation up to 500V
Low on-resistance down to 380mΩ
High continuous drain current up to 10A
Fast switching speed
Low gate charge and gate input capacitance
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 550pF @ 100V
Power Dissipation (Tc): 85W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET design with advanced MDmesh M2 technology
Compatibility
Surface mount DPAK (TO-252-3) package
Suitable for various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Suitable for high-voltage, high-power applications
Easy to integrate and deploy
STD12L01SAMHOP