Manufacturer Part Number
STBV32-AP
Manufacturer
STMicroelectronics
Introduction
Bipolar Junction Transistor (BJT), Single, NPN
Product Features and Performance
Voltage Collector Emitter Breakdown (Max): 400 V
Current Collector (Ic) (Max): 1.5 A
Current Collector Cutoff (Max): 1 mA
Vce Saturation (Max) @ Ib, Ic: 1.5 V @ 500 mA, 1.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1 A, 2 V
Power Max: 1.5 W
Operating Temperature: 150°C (TJ)
Product Advantages
High breakdown voltage
High current capability
Low collector-emitter saturation voltage
Good current gain
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Quality and Safety Features
RoHS3 Compliant
Compatibility
Supplier Device Package: TO-92AP
Application Areas
Discrete Semiconductor Products
Transistors Bipolar (BJT) Single
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and current capability
Low saturation voltage
Good current gain
Robust through-hole package
RoHS compliance for environmental safety