STB80NF55-06T4 - STMicroelectronics

Manufacturer Part Number

STB80NF55-06T4

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel STripFET II power MOSFET

Product Features and Performance

Low on-resistance for high efficiency

Fast switching speed

Optimized for high-power, high-frequency applications

Robust avalanche capability

Halogen-free and lead-free

Product Advantages

Excellent thermal management

Improved power density

Enhanced electrical and thermal performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 55 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 6.5 mΩ @ 40 A, 10 V

Current Continuous Drain (Id) @ 25°C: 80 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V

Power Dissipation (Max): 300 W (Tc)

Vgs(th) (Max) @ Id: 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 10 V

Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Halogen-free

Compatibility

Surface mount (D2PAK) package

Suitable for high-power, high-frequency applications

Application Areas

Power supplies

Motor drives

Switching power amplifiers

DC/DC converters

Inverters

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent thermal management and efficiency

Robust avalanche capability for reliable operation

Optimized for high-power, high-frequency applications

Compact and easy to integrate surface mount package

RoHS3 compliance for environmental considerations