Manufacturer Part Number
START499ETR
Manufacturer
STMicroelectronics
Introduction
The START499ETR is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Optimized for RF amplifier and oscillator circuits
Capable of operating at frequencies up to 1.9 GHz
Provides a typical gain of 15 dB and a low noise figure of 3.3 dB at 1.8 GHz
Product Advantages
Excellent high-frequency performance
Compact surface-mount package (SOT-343)
RoHS compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 4.5 V
Collector Current (Max): 600 mA
Transition Frequency: 1.9 GHz
Power Dissipation (Max): 600 mW
Quality and Safety Features
Compliant with RoHS3 directive
Reliable and durable performance
Compatibility
Suitable for a wide range of RF circuit designs
Application Areas
RF amplifier circuits
Oscillator circuits
Wireless communication systems
Product Lifecycle
The START499ETR is an active product and is currently available. There are no immediate plans for discontinuation or replacement.
Key Reasons to Choose This Product
High-frequency performance for efficient RF circuit design
Compact surface-mount package for space-constrained applications
RoHS compliance for environmentally friendly use
Reliable and durable operation