Manufacturer Part Number
ST2310FX
Manufacturer
STMicroelectronics
Introduction
High-power NPN bipolar junction transistor (BJT)
Suitable for use in high-voltage, high-current applications
Product Features and Performance
Capable of handling up to 65W of power
Maximum collector-emitter voltage of 600V
Maximum collector current of 12A
Minimum DC current gain (hFE) of 6.5 at 7A collector current and 5V collector-emitter voltage
Operating temperature range up to 150°C
Product Advantages
Robust design for high-power applications
Reliable performance in harsh environments
Efficient heat dissipation through ISOWATT-218FX package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 600V
Collector Current (max): 12A
Power Dissipation (max): 65W
DC Current Gain (min): 6.5 @ 7A, 5V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of high-power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
High-voltage, high-current switching applications
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgraded models available if needed
Key Reasons to Choose This Product
Robust and reliable performance in high-power applications
Efficient heat dissipation through specialized package
Compliance with RoHS3 standards for environmental responsibility
Availability of compatible and upgraded models for future needs
ST2320RIntel
ST23257-BSTMicroelectronics