Manufacturer Part Number
ST13003-K
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-32-3 Packaging
Operating Temperature: -40°C to 150°C (TJ)
Power Rating: 40W
Collector-Emitter Breakdown Voltage (Max): 400V
Collector Current (Max): 1.5A
Collector Cutoff Current (Max): 1mA
Collector-Emitter Saturation Voltage: 1.5V @ 500mA, 1.5A
Transistor Type: NPN
DC Current Gain (hFE): Min 5 @ 1A, 2V
Product Advantages
Versatile transistor suitable for a wide range of applications
Robust design and high power handling capability
Excellent electrical performance characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 400 V
Current Collector (Ic) (Max): 1.5 A
Current Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-225AA, TO-126-3 Package
Application Areas
Suitable for a wide range of electronic circuits and applications
Product Lifecycle
Active product
Replacements and upgrades available
Several Key Reasons to Choose This Product
Robust and reliable design
High power handling capability
Excellent electrical performance characteristics
Versatile and suitable for a wide range of applications
RoHS3 compliant for environmental friendliness
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