Manufacturer Part Number
SCT20N120
Manufacturer
STMicroelectronics
Introduction
High-performance Silicon Carbide (SiCFET) MOSFET for power electronics applications
Product Features and Performance
Low on-resistance for high efficiency
High breakdown voltage of 1200V
Wide operating temperature range of -55°C to 200°C
Fast switching speed and low gate charge for high-frequency operation
Low input capacitance for high-speed switching
Product Advantages
Improved energy efficiency compared to silicon-based MOSFETs
Reduced power losses and heat generation
Enables more compact and lighter power conversion designs
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Gate-to-Source Voltage (Vgs): +25V/-10V
On-Resistance (Rds(on)): 290mΩ @ 10A, 20V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 650pF @ 400V
Power Dissipation (Ptot): 175W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-temperature environments
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and renewable energy systems
Application Areas
Industrial automation and control
Power conversion and conditioning
Electric vehicles and hybrid-electric vehicles
Renewable energy systems (solar, wind, etc.)
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is an active and ongoing part of STMicroelectronics' product lineup
Replacement or upgrade options may be available in the future as technology advances
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Robust and reliable operation in high-temperature environments
Compact and lightweight design enabled by high-voltage and high-power capabilities
Suitable for a wide range of power electronics applications, providing design flexibility
Ongoing product support and potential for future upgrades or replacements
SCT214CKXingge
SCT20N120AGSTMicroelectronics