Manufacturer Part Number
SCT1000N170
Manufacturer
STMicroelectronics
Introduction
The SCT1000N170 is a high-performance N-channel silicon carbide (SiC) MOSFET transistor designed for use in a variety of power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 1700 V
Continuous Drain Current (Id) of 7A at 25°C
Low On-Resistance (Rds(on)) of 1.3Ω at 3A, 20V
Wide Operating Temperature Range of -55°C to 200°C
Fast Switching Characteristics with Low Gate Charge (Qg) of 13.3 nC at 20V
High Power Dissipation Capability of 96W at Case Temperature (Tc)
Product Advantages
Excellent efficiency and reliability due to SiC technology
High voltage and current handling capability
Compact and efficient power conversion
Wide temperature operation
Key Technical Parameters
Vdss: 1700V
Id: 7A @ 25°C
Rds(on): 1.3Ω @ 3A, 20V
Qg: 13.3 nC @ 20V
Power Dissipation: 96W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal dissipation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Renewable energy systems
Industrial automation and control
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
High voltage and current handling capability
Excellent efficiency and reliability
Wide temperature operation
Compact and efficient power conversion
Proven performance in a variety of power electronics applications