MD2310FX - STMicroelectronics

Manufacturer Part Number

MD2310FX

Manufacturer

STMicroelectronics

Introduction

High power NPN bipolar junction transistor

Product Features and Performance

Designed for high power switching and amplifier applications

Capable of handling up to 62W of power

Collector-emitter breakdown voltage up to 700V

Collector current up to 14A

Collector cutoff current up to 200A

Low collector-emitter saturation voltage

Product Advantages

Robust and reliable performance

Capable of handling high power and voltage

Suitable for a wide range of high-power applications

Key Technical Parameters

Operating temperature up to 150°C

Power rating: 62W

Collector-emitter breakdown voltage: 700V

Collector current: 14A

Collector cutoff current: 200A

Collector-emitter saturation voltage: 2.5V @ 1.75A, 7A

DC current gain: 6 @ 7A, 5V

Quality and Safety Features

Compliant with RoHS3 standards

Packaged in a reliable TO-3PF package

Compatibility

Suitable for use in high-power switching and amplifier circuits

Application Areas

Industrial power electronics

Motor control

Inverters and converters

Welding equipment

High-power audio amplifiers

Product Lifecycle

This product is an active and widely used device. Replacement or upgrade options are available.

Key Reasons to Choose This Product

High power handling capability up to 62W

Robust and reliable performance

Able to withstand high voltages up to 700V

Suitable for a wide range of high-power applications

Compliant with RoHS3 standards for environmental safety