L6384ED013TR - STMicroelectronics

Manufacturer Part Number

L6384ED013TR

Manufacturer

STMicroelectronics

Introduction

Half-Bridge Gate Driver IC for IGBT and MOSFETs

Product Features and Performance

Dual Independent Channels

Synchronous Drive Capability

Integrated Bootstrap Diode

High Voltage Operation up to 600V

Low Rise and Fall Times for Fast Switching

Wide Supply Voltage Range 14.6V to 16.6V

Product Advantages

Robust Thermal Performance

Enhanced Durability for High Frequency Operations

Efficient Driving of IGBT and N-Channel MOSFET

High Immunity Against dV/dt

Key Technical Parameters

Half-Bridge Driven Configuration

Synchronous Channel Type

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Supply Voltage: 14.6V ~ 16.6V

Logic Voltage - VIL: 1.5V, VIH: 3.6V

Current - Peak Output (Source, Sink): 400mA, 650mA

High Side Voltage - Max (Bootstrap): 600 V

Rise Time (Typ): 50ns

Fall Time (Typ): 30ns

Operating Temperature: -45°C ~ 125°C (TJ)

Quality and Safety Features

High Voltage Capability

Thermal Shutdown Protection

Under Voltage Lockout

Compatibility

Compatible with IGBT and N-Channel Power MOSFETs

Wide Range of Logic Input Voltages for Versatile Interface

Application Areas

Motor Control

Switch Mode Power Supplies

Power Factor Correction

Inverter Circuits

Power Management Systems

Product Lifecycle

Currently Active

Not Nearing Discontinuation

Future Upgrades or Replacements Available if Needed

Key Reasons to Choose This Product

High Efficiency and Lower Power Dissipation for Energy Savings

Capable of Driving a Wide Range of Power Transistors

Minimal Propagation Delays for Accurate Control

Robust Design Suitable for Harsh Environments

Versatility Across Multiple Applications

Ready Availability and Support from STMicroelectronics