Manufacturer Part Number
BUXD87T4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
DPAK (TO-252-3) Package
Operating Temperature up to 150°C
Power Rating up to 20W
Collector-Emitter Breakdown Voltage up to 450V
Collector Current up to 500mA
Low Collector-Emitter Saturation Voltage
Transition Frequency up to 20MHz
Product Advantages
High power handling capability
Wide operating temperature range
Compact surface mount package
Suitable for high-voltage, high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 450V (Max)
Collector Current: 500mA (Max)
Collector-Emitter Saturation Voltage: 1V @ 20mA, 200mA
DC Current Gain: 12 (Min) @ 40mA, 5V
Transition Frequency: 20MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for Tape & Reel packaging
Compatibility
Surface Mount Technology (SMT) Assembly
Application Areas
High-voltage, high-power electronic circuits
Power supplies
Motor drives
Switching circuits
Product Lifecycle
Current product, no known discontinuation plans
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Compact surface mount package
Suitable for high-voltage, high-power applications
Reliable performance and quality