BDX53BFP - STMicroelectronics

Manufacturer Part Number

BDX53BFP

Manufacturer

STMicroelectronics

Introduction

High-power NPN Darlington transistor

Product Features and Performance

High collector-emitter breakdown voltage: 80V

High collector current: 8A

High DC current gain: 750 (min) @ 3A, 3V

Low collector-emitter saturation voltage: 2V @ 12mA, 3A

Capable of high-power switching and amplification applications

Suitable for industrial and automotive electronics

Product Advantages

Excellent power handling capability

High current and voltage ratings

Low saturation voltage for efficient power conversion

Robust Darlington configuration for reliable operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80V

Collector Current (IC): 8A

DC Current Gain (hFE): 750 (min) @ 3A, 3V

Collector-Emitter Saturation Voltage (VCE(sat)): 2V @ 12mA, 3A

Power Dissipation: 29W

Operating Temperature: -55°C to +150°C

Quality and Safety Features

Compliant with RoHS3 directive

Industrially qualified and tested for reliability

Compatibility

Suitable for replacement or upgrade in power electronics circuits

Compatible with standard TO-220 footprint and pinout

Application Areas

Industrial motor drives

Power supplies and converters

Automotive electronics

General high-power switching and amplification applications

Product Lifecycle

This product is an active, in-production part from STMicroelectronics

Replacement or upgraded versions may be available in the future

Several Key Reasons to Choose This Product

Excellent power handling capability with high voltage and current ratings

Robust Darlington configuration for reliable and efficient operation

Low saturation voltage for minimal power losses in power conversion circuits

Wide operating temperature range suitable for industrial and automotive applications

RoHS3 compliance for environmentally-friendly use

Proven reliability and performance in numerous industrial and automotive applications