Manufacturer Part Number
BD135-16
Manufacturer
STMicroelectronics
Introduction
The BD135-16 is a high-performance NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is designed for a wide range of general-purpose amplifier and switching applications.
Product Features and Performance
High current handling capability up to 1.5A
High voltage rating up to 45V
Low saturation voltage for efficient power transfer
Wide operating temperature range up to 150°C
High current gain (hFE) of at least 40 at 150mA, 2V
Product Advantages
Robust and reliable performance
Efficient power handling
Versatile in various amplifier and switching applications
Compact and space-saving package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45V
Collector Current (IC): 1.5A
Collector Cutoff Current (ICBO): 100nA
Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 50mA, 500mA
DC Current Gain (hFE): 40 min. @ 150mA, 2V
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-temperature environments up to 150°C
Compatibility
The BD135-16 is a direct replacement for various NPN bipolar transistors in the BD135 series. It is compatible with a wide range of electronic circuits and can be used in many applications.
Application Areas
General-purpose amplifier circuits
Switching applications
Power supply circuits
Industrial and automotive electronics
Product Lifecycle
The BD135-16 is an active and widely available product from STMicroelectronics. There are no known plans for discontinuation, and it can be easily replaced with other compatible transistors in the BD135 series.
Key Reasons to Choose This Product
Robust and reliable performance
Efficient power handling capabilities
Versatile in a wide range of applications
RoHS3 compliance for environmentally-friendly use
Availability and direct replacement options