Manufacturer Part Number
BCY59VIII
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-18 Package
Operating Temperature: 175°C (TJ)
Power Max: 390 mW
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 200 mA
Current Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency Transition: 200MHz
Product Advantages
RoHS3 Compliant for environmental friendliness
High-performance NPN transistor
Compact TO-18 metal can package
Key Technical Parameters
Operating Temperature Range: -55°C to 175°C
Power Dissipation: 390 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current: 200 mA
Collector Cutoff Current: 10 nA
DC Current Gain: Minimum 180 @ 2 mA, 5 V
Transition Frequency: 200 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable metal can package
Compatibility
Compatible with a wide range of electronic circuit designs
Application Areas
Suitable for general-purpose amplifier and switching applications in electronic circuits
Product Lifecycle
Current production product
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High-performance NPN transistor with excellent technical specifications
Compact and reliable metal can package
RoHS3 compliance for environmental considerations
Suitable for a wide range of electronic circuit applications