R1LV1616HBG-4SI#B0 - Renesas

Manufacturer Part Number

R1LV1616HBG-4SI#B0

Manufacturer

Renesas Electronics America

Introduction

The R1LV1616HBG-4SI#B0 is a high-performance 16Mbit SRAM memory module from Renesas Electronics. It offers a parallel interface and asynchronous SRAM technology, delivering reliable and fast data storage and retrieval capabilities for a wide range of embedded applications.

Product Features and Performance

16Mbit memory capacity

1M x 16 memory organization

Parallel memory interface

Asynchronous SRAM technology

45ns write cycle time (word, page)

45ns access time

7V to 3.6V supply voltage

Operating temperature range of -40°C to +85°C

Product Advantages

High-density, high-speed SRAM storage

Wide operating voltage and temperature range

Reliable asynchronous SRAM performance

Efficient parallel interface for easy integration

Key Reasons to Choose This Product

Robust, industrial-grade performance for demanding applications

Flexibility in power supply and operating environments

Seamless integration with various microcontrollers and processors

Cost-effective solution for high-capacity SRAM needs

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry safety and environmental standards

Compatibility

Suitable for a wide range of embedded systems and applications

Application Areas

Industrial automation and control systems

Telecommunications equipment

Medical devices

Automotive electronics

Consumer electronics

Product Lifecycle

This product is currently obsolete. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.