R1EV5801MBTDRDI#B0 - Renesas

Manufacturer Part Number

R1EV5801MBTDRDI#B0

Manufacturer

Renesas Electronics America

Introduction

The R1EV5801MBTDRDI#B0 is a 1Mbit EEPROM memory chip from Renesas Electronics. It offers a parallel interface and supports a wide operating voltage range of 2.7V to 5.5V, making it suitable for a variety of applications.

Product Features and Performance

1Mbit memory capacity

128K x 8 memory organization

Parallel memory interface

10ms write cycle time (word/page)

150ns access time

Operates over a -40°C to 85°C temperature range

32-TFSOP (0.488", 12.40mm Width) surface mount package

Product Advantages

Wide operating voltage range for versatile applications

Fast write cycle time and access time for efficient data storage and retrieval

Compact surface mount package for space-constrained designs

Reliable EEPROM technology for non-volatile data storage

Key Reasons to Choose This Product

Proven reliability and performance from a leading semiconductor manufacturer

Suitable for a wide range of applications that require non-volatile memory

Easily integrated into various electronic systems due to the parallel interface

Cost-effective solution for memory requirements

Quality and Safety Features

Manufactured to high quality standards

Robust design for reliable operation in various environmental conditions

Compliance with relevant industry standards and regulations

Compatibility

The R1EV5801MBTDRDI#B0 is compatible with a variety of electronic systems and devices that require non-volatile memory storage.

Application Areas

Industrial control systems

Automotive electronics

Consumer electronics

Embedded systems

Telecommunications equipment

Product Lifecycle

The R1EV5801MBTDRDI#B0 is currently in the obsolete stage of its product lifecycle. Customers are advised to contact our website's sales team for information on available equivalent or alternative models that may suit their requirements.