Manufacturer Part Number
UPA672T-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) MOSFET configuration
Power rating: 200mW
Drain to Source Voltage (Vdss): 50V
On-resistance (Rds On): 20Ohm @ 10mA, 4V
Continuous Drain Current (Id): 100mA @ 25°C
Input Capacitance (Ciss): 6pF @ 3V
Logic Level Gate FET
Product Advantages
MOSFET technology offers fast switching and low power consumption
Dual channel design provides design flexibility
Compact 6-TSSOP package for space-saving applications
Key Technical Parameters
MOSFET technology
2 N-Channel configuration
50V Drain to Source Voltage
20Ohm On-resistance
100mA Continuous Drain Current
6pF Input Capacitance
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package
Application Areas
Suitable for a wide range of electronic circuits and devices requiring low-power, high-speed switching
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose
Compact, space-saving package
Reliable MOSFET technology
Dual channel design flexibility
Low on-resistance and power consumption
Suitable for a variety of electronic applications