Manufacturer Part Number
UPA2826T1S-E2-AT
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance power MOSFET transistor designed for various power management applications
Product Features and Performance
20V drain-to-source voltage rating
Low on-resistance of 4.3mΩ @ 13.5A, 8V
Continuous drain current of 27A at 25°C
Input capacitance of 3610 pF @ 10V
Maximum power dissipation of 20W at 25°C
N-channel MOSFET with enhancement mode
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-current, high-power applications
Compact 8-PowerWDFN package for small form factor designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 4.3mΩ @ 13.5A, 8V
Continuous Drain Current (Id): 27A at 25°C
Input Capacitance (Ciss): 3610 pF @ 10V
Power Dissipation (Pd): 20W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for various power management applications, such as:
- DC-DC converters
- Motor drives
- Power supplies
- Amplifiers
Application Areas
Power management
Motor control
Lighting applications
Telecommunications equipment
Industrial automation
Product Lifecycle
Currently available and actively supported
Replacement or upgrade options may be available from Renesas or other manufacturers
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Compact 8-PowerWDFN package for space-constrained designs
High current handling capability of 27A
Low on-resistance of 4.3mΩ for reduced power losses
Suitable for a wide range of power management applications
Manufactured to high quality standards and RoHS3 compliant
