Manufacturer Part Number
UPA2815T1S-E2-AT
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance P-channel MOSFET transistor
Designed for power management and control applications
Product Features and Performance
30V drain-to-source voltage (Vdss)
21A continuous drain current (Id) at 25°C
11mΩ maximum on-resistance (Rds(on)) at 21A, 10V
76nF maximum input capacitance (Ciss) at 10V
5W maximum power dissipation at 25°C ambient temperature
Product Advantages
Excellent power efficiency due to low on-resistance
High current capability for power management applications
Small package size for compact design
Key Technical Parameters
MOSFET technology
P-channel FET type
±20V maximum gate-to-source voltage (Vgs)
47nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
150°C maximum junction temperature (TJ)
Compatibility
Surface mount package (8-HWSON 3.3x3.3mm)
Tape and reel packaging
Application Areas
Power management circuits
Motor control
Lighting control
Battery charging and protection
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High current capability
Low on-resistance for efficient power management
Small package size for compact designs
Proven reliability and performance
