Manufacturer Part Number
RJK60S3DPP-E0#T2
Manufacturer
Renesas Electronics Corporation
Introduction
This is a discrete N-channel MOSFET transistor product from Renesas Electronics Corporation.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600V
On-resistance (Rds(on)) of 440mOhm @ 6A, 10V
Continuous Drain Current (Id) of 12A at 25°C
Input Capacitance (Ciss) of 720pF @ 25V
Power Dissipation of 27.7W at Tc
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Suitable for a variety of power switching applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
TO-220-3 Full Pack (TO-220FP) Package
150°C Maximum Junction Temperature (Tj)
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
This MOSFET is compatible with a wide range of power electronic circuits and applications.
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Lighting and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase. Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Low on-resistance for high efficiency
Reliable and durable construction
Compatibility with a wide range of power electronic applications
