Manufacturer Part Number
RJK1051DPB-00#J5
Manufacturer
Renesas Electronics Corporation
Introduction
The RJK1051DPB-00#J5 is a high-performance N-channel MOSFET transistor from Renesas Electronics Corporation. It is designed for a variety of power electronics applications.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
15A Continuous Drain Current (Id) at 25°C
Low On-Resistance (Rds(on)) of 39mΩ at 10V Gate-Source Voltage
High Power Dissipation of 45W at 25°C Case Temperature
Fast Switching Speed
Low Gate Charge (Qg) of 15nC at 4.5V Gate-Source Voltage
Product Advantages
Excellent power handling capability
Efficient power conversion with low conduction losses
Suitable for high-frequency switching applications
Compact and space-saving LFPAK surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 39mΩ @ 7.5A, 10V
Continuous Drain Current (Id): 15A at 25°C
Input Capacitance (Ciss): 2060pF @ 10V
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
Reliable performance under high-temperature operating conditions up to 150°C
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Industrial automation and control equipment
Product Lifecycle
The RJK1051DPB-00#J5 is an actively supported product by Renesas Electronics Corporation.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High power handling capability for efficient power conversion
Low on-resistance for reduced conduction losses
Fast switching speed for high-frequency applications
Compact and space-saving LFPAK package
Reliable performance under high-temperature conditions
RoHS3 compliance for environmental responsibility
