Manufacturer Part Number
RJK0452DPB-00#J5
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a single N-Channel MOSFET transistor from Renesas Electronics Corporation.
Product Features and Performance
N-Channel MOSFET transistor
Designed for high-power, high-efficiency switching applications
Low on-resistance (RDS(on)) of 3.5 mOhm at 22.5 A, 10 V
High continuous drain current (ID) of 45 A at 25°C
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Compact surface-mount package (LFPAK)
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
Input Capacitance (Ciss): 4030 pF at 10 V
Power Dissipation (Tc): 55 W
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with standard surface-mount assembly processes
Application Areas
Switching power supplies
Motor drives
Inverters
Servo amplifiers
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and availability.
Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and reliable surface-mount package
Suitable for high-power, high-frequency switching applications
Competitive technical specifications and performance
