RJK03C0DPA-00#J53 - Renesas Electronics America Inc

Manufacturer Part Number

RJK03C0DPA-00#J53

Manufacturer

Renesas Electronics Corporation

Introduction

This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.

Product Features and Performance

30V Drain-to-Source Voltage (Vdss)

2mOhm maximum On-Resistance (Rds(on)) at 35A, 10V

70A continuous Drain Current (Id) at 25°C

11000pF maximum Input Capacitance (Ciss) at 10V

65W maximum Power Dissipation at Tc

5V maximum Gate Threshold Voltage (Vgs(th)) at 1mA

66nC maximum Gate Charge (Qg) at 4.5V

Product Advantages

Low On-Resistance for high efficiency

High current handling capability

Surface mount package for compact designs

Key Technical Parameters

MOSFET technology

N-Channel FET type

30V Drain-to-Source Voltage

2mOhm maximum On-Resistance

70A continuous Drain Current

Quality and Safety Features

RoHS compliance status not applicable

Compatibility

Compatible with various surface mount applications

Application Areas

Suitable for use in power supply, motor control, and other high-power switching applications

Product Lifecycle

Current production status, no information on discontinuation or replacements

Key Reasons to Choose This Product

High current handling capability

Low on-resistance for improved efficiency

Compact surface mount package

Suitable for a variety of power electronics applications