Manufacturer Part Number
RJK0393DPA-00#J5A
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel power MOSFET transistor with low on-resistance and high power handling capability.
Product Features and Performance
Low on-resistance of 4.3 mΩ @ 20A, 10V
High continuous drain current of 40A at 25°C
High power dissipation of 40W at Tc
Wide operating temperature range up to 150°C
Low gate charge of 21 nC @ 4.5V
Low input capacitance of 3270 pF @ 10V
Product Advantages
Excellent efficiency and power density
Reliable high-current operation
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.3 mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Power Dissipation (Pd): 40W @ Tc
Operating Temperature (Tj): -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (8-WPAK)
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial power control
Telecommunication power systems
Product Lifecycle
Current product offering, no plans for discontinuation
Replacements and upgrades available from Renesas
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable high-current operation
Wide operating temperature range
Small and compact surface mount package
RoHS compliance for environmental safety
