RJH65T14DPQ-A0#T0 - Renesas Electronics America Inc

Manufacturer Part Number

RJH65T14DPQ-A0#T0

Manufacturer

Renesas Electronics Corporation

Introduction

High-power discrete IGBT transistor suitable for a wide range of industrial applications.

Product Features and Performance

Trench IGBT technology for high efficiency and fast switching

Rated for 650V, 100A operation

Low on-state voltage (Vce(on)) of 1.75V at 50A

Fast reverse recovery time (trr) of 250ns

High power handling capability up to 250W

Product Advantages

Efficient power conversion with low switching losses

Robust and reliable operation in high-power applications

Compact and easy to integrate design

Key Technical Parameters

Collector-Emitter Voltage (VCES): 650V

Collector Current (IC): 100A

On-state Voltage (VCE(on)): 1.75V @ 15V, 50A

Reverse Recovery Time (trr): 250ns

Gate Charge (Qg): 80nC

Quality and Safety Features

RoHS3 compliant

TO-247A package for secure mounting and heat dissipation

Compatibility

Suitable for a wide range of industrial power electronics applications, including motor drives, inverters, and power supplies.

Application Areas

Industrial motor drives

Power inverters

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating systems

Product Lifecycle

The RJH65T14DPQ-A0#T0 is an active product and is not nearing discontinuation. Renesas Electronics Corporation provides ongoing support and availability for this model.

Key Reasons to Choose This Product

High efficiency and fast switching with trench IGBT technology

Robust and reliable operation with high power handling capability

Compact and easy to integrate design with secure TO-247A package

Suitable for a wide range of industrial power electronics applications

Ongoing support and availability from Renesas Electronics Corporation