R1WV3216RBG-7SI#B0 - Renesas Electronics America Inc

Manufacturer Part Number

R1WV3216RBG-7SI#B0

Manufacturer

Renesas Electronics Corporation

Introduction

This is a high-performance, low-power SRAM integrated circuit from Renesas Electronics Corporation. It offers a 32Mbit memory capacity in a compact 48-TFBGA package.

Product Features and Performance

32Mbit SRAM memory

Parallel memory interface

70ns access time

70ns write cycle time

Operating temperature range of -40°C to +85°C

Supports 2.7V to 3.6V supply voltage

ROHS3 compliant

Product Advantages

High memory capacity in a small footprint

Fast access and write speeds

Wide operating temperature range

Low power consumption

Key Technical Parameters

Memory Size: 32Mbit

Memory Type: Volatile SRAM

Memory Interface: Parallel

Access Time: 70ns

Write Cycle Time: 70ns

Supply Voltage: 2.7V to 3.6V

Operating Temperature: -40°C to +85°C

Package: 48-TFBGA (7.5x8.5)

Quality and Safety Features

ROHS3 compliant

Reliable performance in a wide temperature range

Compatibility

This SRAM IC is compatible with a variety of embedded systems and computing devices that require high-density, fast-access memory.

Application Areas

Embedded systems

Industrial control

Telecommunications equipment

Consumer electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation. Replacement or upgrade options may be available from Renesas Electronics.

Key Reasons to Choose This Product

High memory capacity of 32Mbit in a compact package

Fast access and write speeds of 70ns

Wide operating temperature range of -40°C to +85°C

Low power consumption with a 2.7V to 3.6V supply voltage

Reliable performance with ROHS3 compliance

Compatibility with a wide range of embedded systems and computing devices