R1LV1616RSD-5SI#B0 - Renesas Electronics America Inc

Manufacturer Part Number

R1LV1616RSD-5SI#B0

Manufacturer

renesas-electronics-america

Introduction

The R1LV1616RSD-5SI#B0 is a high-speed static random access memory (SRAM) designed for high-performance electronic applications.

Product Features and Performance

Volatile memory type

16Mbit memory size

Organized as 2M x 8, 1M x 16

Parallel memory interface

55ns write cycle time and access time

Operates within 2.7V to 3.6V voltage supply range

Operating temperature range from -40°C to 85°C

Product Advantages

Fast access and write cycles for high-speed operations

Flexible organization for versatile application use

Wide voltage range suited for various electronic environments

Reliable performance under extreme temperature conditions

Key Technical Parameters

Memory Size: 16Mbit

Memory Organization: 2M x 8, 1M x 16

Access Time: 55 ns

Voltage Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Stringent compliance with industrial safety and quality standards

Operates effectively within a wide temperature range ensuring durability and reliability

Compatibility

Compatible with systems requiring high-speed SRAM with a parallel interface

Application Areas

High-performance computing systems

Telecommunication infrastructure

Automotive electronics

Industrial automation systems

Product Lifecycle

Currently marked as Obsolete

Alternatives or upgrades may be available, consultation with the manufacturer recommended

Several Key Reasons to Choose This Product

High-speed operation facilitating quicker data processing

Versatile memory structure catering to broad system requirements

Durable and reliable under harsh environmental conditions

Renesas' robust support and quality reputation in electronics manufacturing