Manufacturer Part Number
R1LV0416DSB-7LI#B0
Manufacturer
Renesas Electronics Corporation
Introduction
This is a 4Mbit Parallel SRAM memory integrated circuit from Renesas Electronics Corporation.
Product Features and Performance
4Mbit of volatile SRAM memory
Parallel memory interface
70ns access time
70ns write cycle time
Operates from 2.7V to 3.6V power supply
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-performance SRAM memory solution
Compact 44-TSOP II package
Wide voltage and temperature operating ranges
Key Technical Parameters
Memory Size: 4Mbit
Memory Type: Volatile SRAM
Memory Interface: Parallel
Access Time: 70ns
Write Cycle Time: 70ns
Supply Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS compliant (exemptions may apply)
44-TSOP II package for reliable surface mount assembly
Compatibility
This SRAM memory IC is compatible with a variety of embedded systems and applications that require high-performance parallel SRAM.
Application Areas
Embedded systems
Industrial automation and control
Telecom and networking equipment
Military and aerospace applications
Product Lifecycle
This SRAM product is an active and in-production component from Renesas Electronics. Replacement or upgrade options may be available if required in the future.
Key Reasons to Choose This Product
High-performance 4Mbit SRAM memory
Compact and reliable 44-TSOP II package
Wide voltage and temperature operating ranges
RoHS compliance for environmental responsibility
Compatibility with a variety of embedded applications
R1LV0416DBG-7LIRS