Manufacturer Part Number
R1LV0216BSB-5SI#B0
Manufacturer
Renesas Electronics America
Introduction
The R1LV0216BSB-5SI#B0 is a 2Mbit (128K x 16) Parallel SRAM memory chip. It offers high-speed performance with a 55ns access time and a 55ns write cycle time, making it suitable for a wide range of applications that require fast, reliable data storage.
Product Features and Performance
2Mbit (128K x 16) Parallel SRAM memory
55ns access time
55ns write cycle time
Operates on 2.7V to 3.6V power supply
Wide temperature range of -40°C to 85°C
Product Advantages
High-speed performance for demanding applications
Reliable data storage with SRAM technology
Wide voltage and temperature range for versatile use
Key Reasons to Choose This Product
Proven reliability and performance from a trusted manufacturer
Suitable for a variety of applications that require fast, reliable memory
Cost-effective solution for your memory needs
Quality and Safety Features
Rigorously tested for quality and reliability
Complies with industry safety standards
Compatibility
Suitable for use in a wide range of electronic devices and systems
Application Areas
Industrial automation
Telecommunications equipment
Embedded systems
Consumer electronics
Product Lifecycle
["This product is considered obsolete and may be nearing discontinuation.","Customers are advised to contact our website's sales team for information on available equivalent or alternative models."]
