Manufacturer Part Number
R1EX24512BSAS0I#S0
Manufacturer
renesas-electronics-america
Introduction
EEPROM memory device for non-volatile data storage
Product Features and Performance
Non-Volatile EEPROM technology
Memory Size of 512 Kbit
Memory Organization 64K x 8
I2C Memory Interface
Clock Frequency of 1 MHz
Write Cycle Time for Word, Page at 5ms
Access Time of 550 ns
Versatile Voltage Supply Range from 1.8V to 5.5V
Suitable to operate in temperatures ranging from -40°C to 85°C
Surface Mount 8-SOIC Package
Product Advantages
High reliability and retention capability
Wide voltage supply range for various application requirements
Fast write cycle time enhances device performance
Broad temperature range for extreme conditions
Key Technical Parameters
Memory Type: EEPROM
Memory Format: EEPROM
I2C Interface
Clock Frequency: 1 MHz
Write Cycle: 5ms
Voltage Supply: 1.8V to 5.5V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Robust storage with non-volatile memory
Operational stability across a wide temperature range
Compatibility
Standard I2C protocol for easy integration
Compatible with many microcontrollers and digital systems
Application Areas
Industrial automation systems
Consumer electronics
Automotive applications
Data logging systems
Product Lifecycle
Active product status, not nearing discontinuation
Availability of replacements or upgrades can be checked with Renesas directly
Several Key Reasons to Choose This Product
Durable and stable non-volatile memory option
Capable of high-speed write operations
Flexible for use across various operating voltages
Resistant to harsh environmental conditions
Supports a wide array of applications and platforms
