Manufacturer Part Number
NP83P04PDG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a high-performance P-channel power MOSFET from Renesas Electronics Corporation, designed for various power electronics applications.
Product Features and Performance
High current carrying capability of up to 83A continuous drain current at 25°C
Low on-resistance of 5.3 milliohms @ 41.5A, 10V
High input capacitance of 9820 pF @ 10V
40V drain-to-source voltage rating
Short gate charge of 200 nC @ 10V
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable performance in high-current applications
Compact TO-263 package for space-saving designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 5.3 milliohms
Continuous Drain Current (Id): 83A
Input Capacitance (Ciss): 9820 pF
Gate Charge (Qg): 200 nC
Quality and Safety Features
RoHS3 compliant
Robust TO-263 package
Compatibility
This MOSFET is compatible with various power electronics applications, such as motor drives, power supplies, and industrial control systems.
Application Areas
Power conversion and control
Motor drives
Power supplies
Industrial automation
Product Lifecycle
This product is currently in active production and not nearing discontinuation. Replacement or upgrade options may be available from Renesas Electronics.
Key Reasons to Choose This Product
High current handling capability for demanding power electronics applications
Excellent power efficiency due to low on-resistance
Reliable performance in high-current environments
Compact and robust TO-263 package for space-saving designs
RoHS3 compliance for environmentally-friendly applications
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