Manufacturer Part Number
NP36P06SLG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance P-channel MOSFET with low on-resistance and high current capability
Product Features and Performance
High current capability: 36A continuous drain current at 25°C case temperature
Low on-resistance: 30mΩ typical at 18A, 10V
Fast switching speed
Wide operating temperature range: -55°C to 175°C
Product Advantages
Efficient power conversion and management
Reduced power loss and heat generation
Suitable for a wide range of power applications
Key Technical Parameters
60V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
3200pF Input Capacitance (Ciss)
52nC Gate Charge (Qg)
2W Power Dissipation at 25°C ambient temperature
56W Power Dissipation at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
TO-252 (MP-3ZK) package for efficient heat dissipation
Compatibility
Compatible with various power management and conversion applications
Application Areas
Automotive electronics
Industrial power supplies
Telecommunications equipment
Household appliances
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Fast switching speed for improved system performance
Wide operating temperature range for versatile applications
Compact and thermally efficient TO-252 package
RoHS3 compliance for environmental responsibility
NP36P04SDGRenesas Electronics Corporation