NP22N055SLE-E1-AY - Renesas Electronics America Inc

Manufacturer Part Number

NP22N055SLE-E1-AY

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance N-channel MOSFET transistor suitable for various power management and switching applications.

Product Features and Performance

Low on-resistance (RDS(on)) of 37 mOhm for high efficiency

High drain current rating of 22A at 25°C

Wide operating temperature range up to 175°C

Low input capacitance (Ciss) of 1100 pF for fast switching

Low gate charge (Qg) of 23 nC for efficient gate drive

Product Advantages

High power density and efficiency for compact, high-performance power systems

Reliable operation in high-temperature environments

Fast switching capability for improved power conversion efficiency

Key Technical Parameters

Drain-to-Source Voltage (VDS): 55V

Gate-to-Source Voltage (VGS): ±20V

Continuous Drain Current (ID): 22A at 25°C

On-Resistance (RDS(on)): 37 mOhm at 11A, 10V

Input Capacitance (Ciss): 1100 pF at 25V

Power Dissipation: 1.2W at 25°C, 45W at 25°C (case)

Quality and Safety Features

RoHS3 compliant

TO-252 (DPak) package for reliable surface mount assembly

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Industrial and automotive electronics

Product Lifecycle

Currently in active production

No planned discontinuation or replacement

Key Reasons to Choose This Product

Excellent power efficiency and density for compact, high-performance designs

Reliable operation in high-temperature environments

Fast switching capability for improved power conversion efficiency

RoHS3 compliance for use in a wide range of applications

Readily available in standard packaging for easy integration