NP20P06SLG-E1-AY - Renesas Electronics America Inc

Manufacturer Part Number

NP20P06SLG-E1-AY

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance P-channel MOSFET transistor designed for use in power management and control applications.

Product Features and Performance

60V drain-source voltage rating

20A continuous drain current at 25°C case temperature

48mΩ maximum on-resistance at 10A, 10V

1650pF maximum input capacitance at 10V

34nC maximum gate charge at 10V

Operates at junction temperatures up to 175°C

Product Advantages

Excellent power handling and efficiency

Compact TO-252 (DPAK) surface-mount package

Suitable for high-frequency, high-power applications

Robust design for reliable operation

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 48mΩ @ 10A, 10V

Continuous Drain Current (Id): 20A @ 25°C

Input Capacitance (Ciss): 1650pF @ 10V

Gate Charge (Qg): 34nC @ 10V

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Compatible with standard TO-252 (DPAK) mounting and footprints

Application Areas

Power management and control circuits

Motor drives

DC-DC converters

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Renesas or other suppliers.

Key Reasons to Choose This Product

Excellent power handling and efficiency for high-power applications

Compact surface-mount packaging for space-constrained designs

Robust design and high-temperature operation for reliable performance

Proven track record and support from a leading semiconductor manufacturer