Manufacturer Part Number
NP180N04TUK-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capability
Product Features and Performance
Extremely low on-resistance of 1.05 mΩ
High continuous drain current of 180 A at 25°C
High power dissipation of 1.8 W at 25°C ambient and 348 W at 25°C case temperature
Wide operating temperature range up to 175°C
Low gate charge of 297 nC
Product Advantages
Excellent power efficiency due to ultra-low on-resistance
High current handling capability
Compact and thermally efficient DPak package
Suitable for high-power, high-current applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 40 V
Gate-to-source voltage (Vgs): ±20 V
Continuous drain current (Id): 180 A
On-resistance (Rds(on)): 1.05 mΩ
Input capacitance (Ciss): 15,750 pF
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-power, high-current applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Traction control systems
Industrial automation equipment
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgrade options may be available from Renesas Electronics Corporation
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current handling capability
Wide operating temperature range
Compact and thermally efficient package
Designed and manufactured to high quality standards
Suitable for a variety of high-power, high-current applications
NP180N04TUJNEC
NP1800SCT3GonsemiTHYRISTOR 170V 100A DO214AA