Manufacturer Part Number
NP15P06SLG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a single P-channel MOSFET transistor from Renesas Electronics Corporation's NP15P06 series.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
70mOhm On-Resistance (Rds(on)) at 7.5A, 10V
15A Continuous Drain Current (Id) at 25°C
1100pF Input Capacitance (Ciss) at 10V
2W Power Dissipation at 25°C, 30W at Case Temperature
MOSFET Technology
Product Advantages
High Voltage Capability
Low On-Resistance
High Current Handling
Small Footprint Surface Mount Package
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 70mOhm
Continuous Drain Current (Id): 15A
Input Capacitance (Ciss): 1100pF
Power Dissipation: 1.2W (Ta), 30W (Tc)
Quality and Safety Features
ROHS3 Compliant
TO-252 (MP-3ZK) Package
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Surface Mount Mounting Type
Application Areas
Power Supplies
Motor Drives
Switching Circuits
Industrial Controls
Product Lifecycle
Current Production
Replacements and Upgrades Available
Key Reasons to Choose This Product
High Voltage and Current Capability
Low On-Resistance for Efficient Power Switching
Small Footprint Surface Mount Package
Proven Renesas Electronics Corporation Quality and Reliability
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