Manufacturer Part Number
NESG2101M05-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
The NESG2101M05-T1-A is a high-frequency NPN bipolar junction transistor (BJT) designed for RF applications.
Product Features and Performance
Power Rating: 500mW
Collector-Emitter Breakdown Voltage: 5V (max)
Collector Current: 100mA (max)
DC Current Gain (hFE): 130 (min) @ 15mA, 2V
Transition Frequency: 17GHz
Gain: 11dB ~ 19dB
Noise Figure: 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Product Advantages
High-frequency performance for RF applications
Low noise figure for improved signal-to-noise ratio
Stable and reliable operation
Key Technical Parameters
Transistor Type: NPN
Packaging: SOT-343F (M05)
Mounting Type: Surface Mount
Quality and Safety Features
Reliable and robust construction
Complies with relevant safety standards
Compatibility
Suitable for a wide range of RF and wireless communication applications
Application Areas
RF amplifiers
Mixers
Oscillators
Switches
Wireless communication systems
Product Lifecycle
Currently available
No known plans for discontinuation
Several Key Reasons to Choose This Product
High-frequency performance for RF applications
Low noise figure for improved signal quality
Reliable and stable operation
Compact surface mount packaging
Compatibility with a wide range of RF and wireless communication applications
