NE5531079A-T1-A - Renesas Electronics America Inc

Manufacturer Part Number

NE5531079A-T1-A

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance RF power MOSFET transistor for use in wireless communication applications

Product Features and Performance

LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology

Optimized for 460 MHz operation

40 dBm (10 W) output power

200 mA test current

30 V rated voltage

5 V test voltage

3 A current rating

Product Advantages

High power output

Efficient performance at 460 MHz

Reliable LDMOS technology

RoHS3 compliant

Key Technical Parameters

Power Output: 40 dBm

Test Current: 200 mA

Rated Voltage: 30 V

Test Voltage: 7.5 V

Current Rating: 3 A

Frequency: 460 MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for use in wireless communication applications

Application Areas

Wireless communication equipment

RF power amplifiers

Base stations

Repeaters

Product Lifecycle

Currently available

No planned discontinuation

Key Reasons to Choose This Product

High power output of 40 dBm (10 W)

Optimized for 460 MHz operation

Reliable LDMOS technology

RoHS3 compliant

Suitable for a wide range of wireless communication applications