Manufacturer Part Number
NE5531079A-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance RF power MOSFET transistor for use in wireless communication applications
Product Features and Performance
LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology
Optimized for 460 MHz operation
40 dBm (10 W) output power
200 mA test current
30 V rated voltage
5 V test voltage
3 A current rating
Product Advantages
High power output
Efficient performance at 460 MHz
Reliable LDMOS technology
RoHS3 compliant
Key Technical Parameters
Power Output: 40 dBm
Test Current: 200 mA
Rated Voltage: 30 V
Test Voltage: 7.5 V
Current Rating: 3 A
Frequency: 460 MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for use in wireless communication applications
Application Areas
Wireless communication equipment
RF power amplifiers
Base stations
Repeaters
Product Lifecycle
Currently available
No planned discontinuation
Key Reasons to Choose This Product
High power output of 40 dBm (10 W)
Optimized for 460 MHz operation
Reliable LDMOS technology
RoHS3 compliant
Suitable for a wide range of wireless communication applications