Manufacturer Part Number
ISL95808IRZ-T
Manufacturer
Renesas Electronics America
Introduction
High-performance Power Management Integrated Circuit (PMIC) for gate driving applications
Product Features and Performance
Half-Bridge Driver Configuration
Synchronous Channel Type
Dual Driver Capability
Designed for N-Channel MOSFET gate driving
Fast Rise and Fall Times at 8ns for improved switching speed
High Side Voltage support up to 33V for Bootstrap operations
Product Advantages
Optimized for low voltage operations ranging from 4.5V to 5.5V
Peak output current capability of 2A for both source and sink
Non-Inverting Input for simpler signal processing
Enhanced thermal performance with an operating range from -40°C to 125°C
Compact 8-VFDFN package for space-saving applications
Key Technical Parameters
Number of Drivers: 2
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output (Source, Sink): 2A
High Side Voltage - Max (Bootstrap): 33 V
Rise / Fall Time (Typ): 8ns
Quality and Safety Features
Extended temperature range for reliable performance across various environments
Surface Mount package for robust mechanical and thermal connection
Compatibility
Compatible with N-Channel MOSFET Gate driving in synchronous driven configurations
Suitable for digital non-inverting inputs from various control ICs
Application Areas
Power management in computing
Telecommunications equipment
Consumer Electronics
Industrial systems
Product Lifecycle
Product Status: Active
Ongoing manufacturer support with no immediate end-of-life or discontinuation reported
Several Key Reasons to Choose This Product
Outstanding thermal performance and reliability over a wide temperature range
High switching speed to improve overall efficiency
Adaptable to various low voltage power applications
Compact size ideal for space-constrained designs
Strong sourcing and sinking current capabilities for driving power MOSFETs
Backed by Renesas' reputation for quality in the semiconductor industry