Manufacturer Part Number
ISL83202IBZT
Manufacturer
Renesas Electronics America
Introduction
Power Management Integrated Circuit for driving N-Channel MOSFETs in Full-Bridge Configurations
Product Features and Performance
Drives 4 independent channels
Supports N-Channel MOSFET gate driving
Capable of driving Full-Bridge topologies
Non-Inverting input type
High Side Voltage capability up to 70V (Bootstrap)
Fast Rise and Fall Times of 9ns
Product Advantages
High integration for compact designs
Robust thermal performance with a wide operating temperature range
Fast switching speeds for improved efficiency
Industry-standard 16-SOIC package for ease of use
Key Technical Parameters
Voltage Supply Range: 8.5V to 15V
Logic Voltage Levels: VIL 1V, VIH 2.5V
Peak Output Current (Source, Sink): 1A each
Maximum High Side Voltage (Bootstrap): 70V
Quality and Safety Features
Extended junction temperature range from -55°C to 150°C
High peak current capability for demanding applications
Compatibility
Compatible with a wide range of N-Channel MOSFETs
Application Areas
Motor Control
Power Supplies
DC-DC Converters
Solar Inverters
Product Lifecycle
Product Status: Active
Not indicated as nearing discontinuation
Replacements or upgrades should be available as current within Renesas portfolio
Several Key Reasons to Choose This Product
Ideal for high-efficiency power management designs
Suitable for high-temperature environments
Provides reliable high current gate driving solutions
Consistent performance with quick switching characteristics
Trusted manufacturer with a broad support network
Ease of integration into existing designs due to standard packaging